摘要
采用CH4/Ar/H2气源系统,以Si(111)为基片在微波等离子CVD系统中通过工艺的优化在350℃沉积了金刚石膜。研究了不同的基片预处理工艺、微波功率对金刚石结构的影响,用XRD、SEM等测试方法进行了表征,XRD测试结果表明金刚石膜中仍存在缺陷和杂质,SEM测试结果表明金刚石膜由200 nm的球状颗粒组成,存在二次成核现象。
Diamond films were deposited by using CH4/Ar/H2 gas system and silicon （111） wafers as substrate in Microwave Plasma CVD （MPCVD） at low temperature about 350 ℃. The effects of the gas system and proportion, different microwave power, and different pretreatment methods of substrate on the microstructure of diamond films were respectively discussed. The diamond film samples were investigated by X-ray-diffraction （XRD） and Scanning Electron Microscopy （SEM）. The results showed that diamond （111） peak of XRD patterns was very low because of non-diamond phase and defects. The SEM images showed that diamond films were stacked with regular ranged and about 200 nm ball-like diamond seoondary nudeation particles. The diamond films are consisted of no well-faceted particles.
出处
《武汉理工大学学报》
EI
CAS
CSCD
北大核心
2007年第4期49-51,78,共4页
Journal of Wuhan University of Technology
基金
教育部重点项目(重点104136)
湖北省自然科学基金(2006ABA312
2006ABA316)
