摘要
采用直流磁控溅射法在低温、100%Ar的无氧气氛中制备了光电性能优良的铟锡氧化物(ITO,In2O3:SnO2=90:10,质量百分比)薄膜,详细探讨了溅射时改变氩气压强对ITO薄膜结构以及光电性能的影响。结果表明:溅射时氩气压强越小,ITO薄膜的体心立方晶型越完整,导电性越好,但对可见光透过性的影响不大。当氩气压强为0.3Pa时,溅射薄膜性能最佳,其光透过率可达92.9%,电导率为8.9×10-4Ω.cm。
By magnetron sputtering method using indium oxide target （In2O3： SnO2 = 90： 10, wt% ）, highly transparent and conductive ITO films could be successfully deposited on glass substrate at room temperature. The effect of par on the film structure and properties was discussed in detail. The films deposited at lower pAr have more excellent body -centered cubic polycrystalline and more excellent electrical properties. And at par = 0.3 Pa, the maximal transmittance of ITO film is 92.9% for the visible light spectrum, and its conductance is 8.9 ×10 -4Ωocm.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第2期177-180,共4页
Journal of Functional Materials and Devices
基金
国家863计划(No.2003AA32X140)
广西"新世纪十百千人才工程"专项资金(No.2003214)
广西自然基金项目(No.桂科自0542011).
关键词
直流磁控溅射
ITO薄膜
氩气压强
电导率
透过率
magnetron sputtering
ITO thin films
Ar pressure
optical and electrical properties
