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单粒子效应辐射模拟实验研究进展 被引量:18

Progress in simulation experiments of single event effects
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摘要 应用质子直线加速器进行了静态随机存取存储器(SRAM)的单粒子效应模拟实验研究。采用金箔散射法降低质子束流,研制了弱流质子束测量系统,测量散射后的质子束流,实验测得SRAM质子单粒子翻转截面为10-14cm2/bit量级。利用重离子加速器和锎源进行了SRAM的单粒子效应实验。研究其单粒子翻转截面与重离子线性能量传输(LET)值的关系,得到了单粒子翻转阈值和饱和截面。实验表明252Cf源单粒子翻转截面与串列加速器的重离子单粒子翻转截面一致,说明对于SRAM,可以用252Cf源替代重离子加速器测量单粒子翻转饱和截面。与中国原子能研究院、东北微电子研究所合作开展了国内首次重离子微束单粒子效应实验。建立了大规模集成电路重离子微束单粒子效应实验方法,找到了国产SRAM的单粒子翻转敏感区。应用14MeV强流中子发生器进行了SRAM单粒子效应实验,测得了64K位至4M位SRAM器件14MeV中子单粒子翻转截面。用α源进行SRAM单粒子效应辐照实验,模拟封装材料中的232Th和238U杂质发射出的α粒子导致的单粒子翻转。测量α粒子射入SRAM导致的单粒子翻转错误数,计算单粒子翻转截面和失效率,比较三种器件的抗单粒子翻转能力,为器件的选型提供依据。并开展了路由器的α粒子辐照实验,复演了路由器在自然环境中的出错情况,为路由器的设计改进提供了依据。 The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories (SRAMs). A gold foil was used to scatter the proton beam so that it was suitable for proton SEE experiment. A system was designed for measuring the very low proton beam on devices. The Single Event Upest (SEU) cross section is of the order of 10^-14 cm^2/bit for SRAMs under proton irradiation. The SEU effect experiments were performed by using heavy ion accelerator and ^252Cf source, too. The relation between SEU cross section and heavy ion Linear Energy Transfer (LET) was studied. The SEU heavy ion LET thresholds and the saturation SEU cross sections were obtained. Result on the saturation SEU cross sections were the same for using heavy ion accelerator or using ^252Cf source. Therefore it is suitable to measure the saturation SEU cross section for SRAMs using ^252Cf source instead of heavy ion accelerator. Heavy ion micro-beam SEE experiment was firstly performed and the SEU sensitive regions were found for SRAM produced in China. The SEE experiments were performed on neutron 14MeV generator and the SEU cross sections were obtained for SRAMs, too. To compare the ability of three different memories against soft errors, alpha particles' irradiation experiments were done to simulate the alpha particles emitted from ^232Th and ^238U in encapsulation material. Soft errors are measured and the cross sections of SEU and Failures in Time (FIT) are calculated. Alpha particles' irradiation experiments for routers were also done and the errors in natural environment were duplicated.
出处 《核技术》 EI CAS CSCD 北大核心 2007年第4期347-351,共5页 Nuclear Techniques
关键词 单粒子效应 静态随机存取存储器 加速器 辐射源 Single event effects, SRAM, Accelerator, Radiation source
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