期刊文献+

掺杂Li对Mn_xCu_(1-x)O稀磁半导体电学性质的影响

Effect of Li on the electric properties of Mn_xCu_(1-x)O diluted magnetic semiconductors
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摘要 系统地研究了Li掺杂MnxCu1-xO稀磁半导体样品的制备。采用固相反应法,通过改变掺杂浓度、制备工艺等方法获取不同的样品,通过比较、拟合Nyquist图,找出最佳的掺杂方法,并利用交流阻抗谱法分析样品的结构及其电学性质。 The fabrication of doped Li into MnxCu1-xO diluted magnetic semiconductors (O-DMS) were studied in this thesis. The samples were prepared by the solid phase reaction technique at different doping concentration and synthetical conditions. By comparison, we get the optimal dopants and doping concemtration by fitting Nyquist charts. The structure and electrical properties of the samples were analyzed by alternating-current impedance spectra.
出处 《齐齐哈尔大学学报(自然科学版)》 2007年第2期81-83,共3页 Journal of Qiqihar University(Natural Science Edition)
关键词 稀磁半导体 掺杂Li Nyquist图 BODE图 diluted magnetic semiconductorS doped Li Nyquist charts Bode charts
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