摘要
Residual stresses in ion-implanted NiTi alloy are measured by a combined method ofMoir6 interferometry and hole-drilling. Oxygen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×10^17ions/cm^2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moire interferometry with hole-drilling is able to be used to measure residual stresses produced by ion implantation.
Residual stresses in ion-implanted NiTi alloy are measured by a combined method ofMoir6 interferometry and hole-drilling. Oxygen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×10^17ions/cm^2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moire interferometry with hole-drilling is able to be used to measure residual stresses produced by ion implantation.
基金
National Natural Science Foundation of China (10572155)
