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Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method 被引量:2

Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method
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摘要 The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scan-ning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality. The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Ф225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.
出处 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2006年第B12期31-35,共5页 中国航空学报(英文版)
基金 National Defensive Preliminary Research Funds of China (41312040404)
关键词 蓝宝石光学晶体 单晶 SAPMAC法 晶体生长 夹杂 sapphire single crystal inclusions bubbles SAPMAC method
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