摘要
将氮化硅陶瓷的样品经过抛光、清洗、退火等处理后，用离子束辅助沉积（ＩＢＡＤ），离子注入对其进行表面处理，所选用元素为Ｔｉ。辅助轰击的离子为Ａｒ＋和Ｔｉ＋，能量为１００ＫｅＶ；注入离子能量为８０ＫｅＶ和１００ＫｅＶ，注入剂量范围为１０１６至１０１７Ｔｉ／ｃｍ２。用Ｘ射线衍射法和ＡＥＳ对样品的结构和Ｔｉ的深度分布进行了测试，发现注入样品的晶格结构遭到了一定程度的破坏，并且有ＴｉＮ等新相析出。ＩＢＡＤ样品的抗弯强度增加较大，比未处理样品提高９％。注入样品的抗弯强度值随剂量增加而逐步增加。
Si 3N 4 ceramics were modified by ion beam assistant deposition (IBAD) and ion implantation technology. The assistant deposition was carried out by argon ions and titanium ions of 100KeV respectively. The implantation was performed with titanium ions of 80KeV and 100KeV. The ion dose ranged from 10 16 to 10 17 Ti/cm 2. XRD and AES were used to determine the structure and Ti depth profile of samples. The microstructure of as implanted samples was damaged to certain degree, and new phases such as TiN were formed during IBAD and implantation. The flexural strength of samples modified by IBAD was increased up to 9% relative to unimplanted silicon nitride. The flexural strength of as implanted samples increased slowly with increasing dose. The microhardness and fracture toughness of as implanted samples decreased with increasing dose.
出处
《真空》
CAS
北大核心
1997年第1期15-19,共5页
Vacuum
基金
国家自然科学基金
