摘要
采用传统降温法，KDP晶体的生长速度一般在1～2mm／d，DKDP晶体的生长速度甚至更慢，并且晶体的恢复区域较大，利用率低；而采用快速生长法，晶体的生长速度可以提高到20～50mm／d，并且晶体的恢复区域小，利用率高。本文回顾了KDP／DKDP晶体生长的研究进展。并重点评述了KDP/DKDP晶体快速生长的研究进展，报道了近年来大尺寸、高质量KDP晶体的研究动态。
By using the traditional temperature-reduction method, the growth rate of KDP crystal is 1-2mm/d, that of DKDP crystal is even lower, and the capping is large, only less volume of crystal can be used. By using the rapid-growth method, the growth rate of KDP/DKDP crystal can be increased to 20- 50mm/d,and the capping is little, more volume of crystal can be used. Here, we reviewed the new progresses of study on the growth of KDP/DKDP crystals, especially on the rapid growth method in the past years,and reported the new progresses of study on the large and high quality KDP/DKDP crystal.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第2期247-252,共6页
Journal of Synthetic Crystals
基金
国家"863"惯性约束核聚变领域资助项目(No.59823003)
山东优秀中青年奖励基金(03BS079)
关键词
KDP/DKDP晶体
惯性约束核聚变
溶液晶体生长
传统降温法
“点籽晶”快速生长法
KDP/DKDP crystal
inertial confinement fusion （ICF）
crystal growth from solution
traditional temperature-reduction method
＂point-seed＂rapid growth method
