摘要
研究了快速热退火(RTA)对表面光电压SPV法测试氧化硅片中铁的影响。结果表明,氧化硅片在1100℃的条件下RTA 3min后,SPV测出的铁含量大幅度地减小。由于RTA的均匀化作用,氧化硅片表层的铁浓度显著低于氧化刚结束时硅片表层的铁浓度。根据SPV测试理论,从硅片表面到少数载流子产生处这一区域的铁浓度最终决定了铁含量的测试结果,即硅片表层的铁含量代表了整个硅片的铁含量。因此,氧化硅片经RTA处理后,SPV测出的铁含量大幅度地减小。
The effect of rapid thermal annealing （RTA） on the measurement of iron in oxidized wafers with surface photo-voltage was investigated. It is found that the iron concentration measured by SPV in oxidized wafers decreases dramatically after 3 min of RTA at 1100℃. The iron concentration in the superficial layer of oxidized wafers after RTA decreases as a result of the homogenization effect of RTA. According to the theory of SPV, the results of iron concentration measurement are determined by the amount of iron contained in the thin layer from the surface to where the minority carriers are generated. In other words, the iron concentration in the superficial layer of an oxidized wafer represents the iron concentration in the whole wafer. Therefore, the iron concentration measured by SPV in oxidized wafers decreases dramatically after RTA.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第2期178-181,共4页
Semiconductor Technology
关键词
快速热退火
表面光电压
少数载流子
氧化硅片
铁含量
rapid thermal annealing （RTA）
surface photo-voltage （SPV）
minority cartier
oxidized wafer
iron concentration
