Structure and electronic properties of SiC thin-films deposited by RF magnetron sputtering 被引量：1

Structure and electronic properties of SiC thin-films deposited by RF magnetron sputtering

下载PDF

导出

摘要 SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature. SiC thin-films were prepared by RF-magnetron sputtering technique（RMS） with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance--temperature were measured. The results show that the curves of liaR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where △W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250℃. The resistivity is in the range of 2.4 × 10^-3 - 4.4 × 10^-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.

作者周继承郑旭强

机构地区 School of Physics Science and Technology

出处《中国有色金属学会会刊：英文版》 EI CSCD 2007年第2期373-377,共5页 Transactions of Nonferrous Metals Society of China

基金 Project(60371046) supported by the National Natural Science Foundation of China

关键词 SIC薄膜 RF-磁控管溅射法沉积结构电学性质 amorphous SiC thin-films surface morphology electron excitation energy resistivity

分类号 TB43 [一般工业技术]

引文网络
相关文献

参考文献20

1LEI Y M,YU Y H,REN C X,ZOU S C,CHEN D H,WONG S P,WILSON I H.Compositional and structural studies of DC magnetron sputtered SiC films on Si(111)[J].Thin Solid Films,2000,365:53-57.
2SHA Z D,WU X M,ZHUGE L J.Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique[J].Vacuum,2005,79:250-254.
3YAO Wang,ZHANG Yu-min,HAN Jie-cai,ZUO Hong-bo.Fabrication and test of reaction bond silicon carbide for optical applications[J].Trans Nonferrous Met Soc China,2006,16:409-413.
4KERDILES S,RIZK R,PEREZ-RODRIGUEZ A,GARRIDO B,GONZáLEZ-VARONA L,CALVO-BANIO,MORANTE J R.Magnetron sputtering synthesis of silicon-carbon films:Structural and optical characterization[J].Solid-State Electronics,1998,42(12):2315-2320.
5SCHMIDT H,FOTSING E R,BORCHARDT G,CHASSAGNON R,CHEVALIER S,BRUNS U.Crystallization kinetics of amorphous SiC films:Influence of substrate[J].Applied Surface Science,2005,252:1460-1470.
6STAMATE M D.Strong dependence of IR absorption in α-SiC:H dc magnetron sputtered thin films on H2 partial pressure[J].Applied Surface Science,2001,172:47-50.
7WANG Yin-yue,WANG Hui-yao,MA Guo-bin.Effects of high-temperature annealing on the structure of reactive sputtering α-SiC:H films[J].Thin Solid Films,1998,335:249-252.
8GIORGIS F,PIRRI C F,TRESSO E,RAVA P.α-SiC:H films deposited by PECVD from silane+acetylene and silane+acetylene+hydrogen gas mixture[J].Diamond and Related Materials,1997,6:1606-1611.
9MUTO H,KAMIYAB S,KUSUMORI T.Growth mechanism of α-SiC hetero-epitaxial films by PLD as studied on the laser photon,pulse-width and substrates dependence[J].Optical Materials,2003,23:43-47.
10TANG Hui-dong,TAN Shou-hong,HUANG Zheng-ren,DONG Shao-ming,JIANG Dong-liang.Surface morphology of α-SiC coatings deposited by RF magnetron sputtering[J].Surface & Coatings Technology,2005,197:161-167.