摘要
随着现代芯片集成度的不断增加。晶体管的特征尺寸持续减小．著名的摩尔定律受到了极大的挑战。按现在材料、工艺技术的发展，体硅技术在今后发展一段时间后将达到其极限．这就要求有新的材料、新的工艺来满足将来IC工业发展要求。硅纳米线由于其本征材料仍然是硅．能与现代微电子技术相兼容．受纳米尺度量子效应、库仑阻塞效应、表面效应等因素的影响．
Silicon nanowires （SiNWs） were synthesized with silicon monoxide as the only starting material. At the beginning, a protective gas argon was charged into the reaction chamber and the temperature ramp was controlled at 3 ℃ .min^-1. The growth condition for SiNWs was controlled at 480 ℃ under the pressure of 2.8 MPa. The morphology and the structure of the products were characterized by TEM, HRTEM and XRD. The results revealed that SiNWs were diamond structure and their diameters were distributed from 5 to 25 nm. The SiNW was single crystal in the central core and was coated with amorphous silica shell at the exterior surface. Influenced by the quantum effect, Raman spectrum of the SiNWs was found to be redshifted. The oxide-assisted growth mechanism was suggested to explain the growth model of self-assembled SiNWs.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2007年第5期915-918,共4页
Chinese Journal of Inorganic Chemistry
基金
上海-应用材料研究与发展基金(No.06SA02)资助项目。
关键词
硅纳米线
氧化物辅助生长
高压裂解
silicon nanowire
oxide-assisted growth mechanism
decomposition under high pressure
