摘要
以氢气稀释的硅烷（SiH4）为气源，利用PECVD方法在普通玻璃基片上生长a-Si薄膜。采用外加横向电场辅助的金属铝诱导晶化的方法，在氮气气氛条件下对a—Si薄膜样品进行快速退火制备poly-Si薄膜。采用X射线衍射仪、拉曼光谱仪、扫描电镜等测试手段研究了不同的退火时间对a-Si薄膜晶相结构、晶化率和表面形貌的影响。实验结果表明，电场辅助的铝诱导a-Si薄膜晶化效果较无外场作用显著加强，并且随着退火时间的延长，非晶硅薄膜的晶化效果增强。
Polycrystalline silicon films were fabricated by aluminum-induced crystallization. These films are prepared by plasma-enhanced chemical vapor deposition technology from hydrogen-diluted Sill4. The sample a-Si/Al thin films was annealed under the action of the transverse electric field with the N2 ambience with different annealing time at 400 ℃. Using XRD, Raman, and SEM, the effect of annealing time on the aluminum-induced crystallization of amorphous silicon under the action of the transverse electric field was studied. The experimental results indicate that the crystallinity of amorphous silicon thin films with the effect of an electric field is stronger than that of amorphous silicon thin films without the effect of an electric field. The crystallinity of amorphous silicon thin films was enhanced obviously with increment of the annealing time.
出处
《武汉理工大学学报》
CAS
CSCD
北大核心
2007年第E01期260-263,共4页
Journal of Wuhan University of Technology
基金
武汉市科技攻关（20061002037）和硅酸盐材料工程教育部重点实验室（武汉理工大学）开放基金（SYSJJ2005-12）
关键词
太阳电池
非晶硅薄膜
多晶硅薄膜
铝诱导晶化
外加电场
solar cell
hydrogenated amorphous silicon
polycrystalline silicon film
aluminum induced crystallization
electric field
