摘要
采用化学气相沉积方法,以ZnO及无定形碳粉末为原料,高纯Ar气为载气,在单晶硅和Al2O3基底上,用化学气相沉积技术,在750-1 050℃范围内制备了取向的纳米ZnO晶体阵列.用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和荧光光谱(PL)等方法对ZnO薄膜阵列的结构和性能进行了表征,发现沉积温度对取向ZnO纳米阵列的生长结构和光致发光特性有重要影响,并就生长条件对纳米ZnO晶体阵列性能的影响因素进行了讨论分析.
Aligned nano-ZnO arrays are prepared on the silicon and A1203 substrates with CVD method in the temperature range of 750 - 1 050 ℃. The morphology and microstructures of aligned nano - ZnO arrays are researched with SEM, TEM, and PL analytic technologys, respectively. It is found that the deposition temperatures are very importante on the morphologies and microstructures of aligned nano - ZnO arrays. Growth prop- erties of the aligned nano -ZnO arrays are discussed and analyzed in different synthetic conditions.
出处
《辽宁大学学报（自然科学版）》
CAS
2007年第2期173-177,共5页
Journal of Liaoning University：Natural Sciences Edition
关键词
ZnO纳米阵列
化学气相沉积
荧光光谱
ZnO nano - arrays
chemical vapor deposition
photoluminescence
