摘要
采用溶胶-凝胶旋转涂膜工艺,在普通玻璃基片上制备了掺锡氧化铟(ITO)纳米透明导电薄膜。采用紫外-可见透射光谱和四探针技术,研究了不同Sn掺杂量、不同热处理温度和热处理时间以及不同涂层对薄膜光学和电学性能的影响。结果表明薄膜的方块电阻随Sn掺杂量的增大和热处理温度的升高先降低后增加,在适宜的温度范围内薄膜在可见光区平均透过率随热处理温度升高而增加。在一定的温度下,随着热处理时间的延长,ITO薄膜的方块电阻先降低后增加,透射率先增加后降低。在最佳工艺条件下,采用溶胶-凝胶法制备的ITO薄膜平均可见光透过率达86%,薄膜方阻为322Ω/□。
Highly-conductive ITO transparent thin films were prepared on common glass substate by the sol-gel spin-coating process. The effects of heat-treatment temperature and time, Sn dopant content and thickness on the optical and electrical properties of ITO thin films were investigated by UV-Vis transmission spectra and four-probe electrical measurement. The electrical and optical measurement results indicate that the sheet resistance decreases with increasing Sn content up to 11% and then increases with further increasing Sn content, while the sheet resistance decreases with increasing heat-treatment temperature in certain temperature range and the optical transparency increases with increasing heat-treatment temperature. With increasing heat-treatment time, the transmittance of ITO films decreases almost linearly and the sheet resistance first decreases and then increases with extending heat treatment time. Under the best processing conditions, the average visible transmittance is about 86% and the sheet resistance is about 322 Ω/□.
出处
《微纳电子技术》
CAS
2007年第5期241-245,共5页
Micronanoelectronic Technology
基金
山东省自然科学基金资助项目(Y2005f11)
鲁东大学中青年自然科学基金资助项目(21000301)
