摘要
本文以滑板为研究对象，采用硅微粉和碳黑为原料，其混合物在氩气气氛下，于1400-1650℃范围内进行热处理。结果表明：这个系统生成的SiC晶须在低温阶段是为气-固反应为模型，生长的SiC晶须呈直杆状和哑铃状。随着热处理温度升高，SiC晶须生长机理由气-固模型转变为气-液-固模型。
SiC whisker in-situ synthesized in the slide gate was synthesized by Carbothemal reduction of SlOe powder treated in Ar atmosphere at 1400-1650℃, respectively. Its microstructure and reaction mechanism were investigated. It shows that Vapor-Solid grown mechanism of SiC whisker dominates at low treating temperature, and SiC whisker is dumbbell-like besides straight. Vapor-Luquid-Solid grown mechanism appears at high treating temperature due to the existence of Fe impurity and a lot of SiC whisker looks like pins.
出处
《中国材料科技与设备》
2007年第3期35-37,41,共4页
Chinese Materials Science Technology & Equipment
基金
湖北省自然基金资助项目（2006ABA287）
关键词
SIC
晶须
机理
原位生成
滑板
SiC
Whisker
Growth mechanism
In-stiu
Slide gate
