摘要
主要介绍了集成门极换流晶闸管(IGCT)的光刻技术。IGCT器件的光刻次数多,精度要求高,如何保证光刻质量是关键。根据IGCT光刻的特点,从光刻机的性能、光刻胶的选用以及刻蚀工艺改进着手,进行了大量的研究工作,较好地保证了IGCT的光刻质量,使芯片梳条废条率低于万分之二,促成了IGCT器件的研制成功。
The photolithograph of IGCT was introduced. IGCT repeats several times of photolithograph with high precision, and it is important to assure the quality of it. According to the characteristics of the photolithograph of IGCT, a lot of researches were done on the performance of lithograph machine, the selection of photoresist, and the updating technology of etching, so it ensured the quality of lithograph, and the ratio of bad cathode segments was less than 0.2‰, and promoted the success of IGCT device development.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第6期470-473,共4页
Semiconductor Technology
关键词
集成门极换流晶闸管器件
光刻
废条率
IGCT device
photolithograph
ratio of bad cathode segments
