摘要
采用全耗尽CMOS／SIMOX工艺成功地研制出了沟道长度为0．5μm的可在1．5V和3．0V电源电压下工作的SOI器件和环形振荡器电路．在1．5V和3．0V电源电压时环振的单级门延迟时间分别为840ps和390ps．与体硅器件相比，全耗尽CMOS／SIMOX电路在低压时的速度明显高于体硅器件，亚微米全耗尽CMOS／SOI技术是低压低功耗和超高速集成电路的理想选择．
The low voltage high performance 0. 5μm CMOS full depleted (FD) SOI/ SIMOX devices, ring oscillators with 1. SV and 3. 0V supply voltage have been developed. Both N-and P-MOSFETs have well-behaved characteristics. The propagation delay perstage of 19-stage CMOS/SIMOX ring oscillator are 840ps and 390ps with 1. 5V and 3V supply voltage, respectively. The speed of FD CMOS/SIMOX ring oscillator is much faster than CMOS/bulk's in the field of low voltage. Insummary, the submicron fully depleted CMOS/SOI technology is the ideal choice of high speed, low voltage and low power integrated circuits.
