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低能离子修饰技术在L-乳酸菌诱变中的应用 被引量:4

Breeding of the Strains with High Yield of L-lactic Acid with Ion Implantation
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摘要 采用离子修饰技术对一株产L-乳酸的米根霉菌P988进行诱变处理。结果表明,在离子注入能量为10 keV,剂量为50×2.6×1013ions/cm2时,诱变效果较好,从正变菌株中反复筛选,得到一株产酸量高的菌株PN2207,产酸量达110 g/L,比出发菌株提高了23%,经过连续传代试验,其遗传性状稳定;并对其发酵条件如碳氮源和CaCO3进行研究,在含糖150 g/L的摇瓶中发酵,其L-乳酸产量达110 g/L。 A study on Rhizopus oryzae t998 with the production of L-lactic acid with the technology of ion implantation was made. The result showed that the optimal mutagenic effect was at the ion dose of 50 × 2.6 × 10^13 ions/cm^2 and the energy of 10 keV. After lots of screening, a mutant strain PN2207 was obtained whose activity of L-lactic acid about was 23% higher than that of the original swain I998.And it was found that the yield of L-lactic acid from the strain PN2207 was rather stable through successive transfer of cultures.And the optimal carbon and nitrogen source, CaCO3 and their optimal sugar concentration were determined. The concentration of L-lactic acid reached to 110 g/L under the condition of 150 g/L glucose in fermentation medium.
出处 《安徽农业科学》 CAS 北大核心 2007年第15期4397-4399,共3页 Journal of Anhui Agricultural Sciences
基金 河南科技大学科学研究基金(2006QN007)
关键词 离子注入 L-乳酸 米根霉 Ion implantation L-lactic acid Rhizopus oryzae
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