摘要
利用sol-gel法在镀有Au底电极的单晶硅片上,制备掺有Bi2O3、Co2O3、Cr2O3和MnO2的ZnO薄膜压敏电阻。薄膜由旋涂法制备,并在300℃下预处理、600℃退火。制得的ZnO薄膜结晶良好。膜厚约为1μm,ZnO薄膜压敏电阻的非线性系数为15.1,压敏电压为3.037 V,漏电流为43.25μA。
ZnO thin film varistors doped with Bi2O3, Co2O3, Cr2O3 and MnO2were deposited on Au/Si substrates by sol-gel method. The thin films were prepared by spin coating, and then were pretreated at 300 ℃ and annealed at 600 ℃. The thin films are composed of main phase of ZnO with polycrystalline structure, and show remarkable nonlinear I-V characteristics at low applied voltage. The ZnO thin film varistors with thickness of 1 μm, varistor voltage is 3.037 V, nonlinear coefficient is 15.1, leakage current is 43.25 μA.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第6期40-41,44,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.60390073)
