摘要
新结构沟槽栅E-JFET的特点是在栅极下隐埋局域氧化层,以降低栅电容,从而改善器件的开关速度,尤其是适用于低压高频领域。通过理论及仿真分析,与无埋氧化层的沟槽栅MOSFET以及沟槽栅E-JFET进行了性能比较。结果证明,该结构具有最低的开关功耗,即QG最小,在相同条件下相对于沟槽栅MOSFET和沟槽栅E-JFET来说,QG的改善分别可达到86.3%和13.4%。
A novel structure trench E-JFET with burying oxide region beneath gate is designed,which is applied in the field of low voltage and high frequency operation.This device has low gate capacitance and high switching speed.It is verified through theoretical analysis and simulation that this structure has the lowest switching power consumption, i.e. the lowest Qc, compared with trench MOSFET and trench E-JFET which have no buried oxide region, QG improvement is up to 86.3% and 13.4% respectively at the same test conditions.
出处
《电力电子技术》
CSCD
北大核心
2007年第6期96-98,共3页
Power Electronics
基金
北京市教委科技发展计划资助(KM200510005022)~~
