摘要
采用商用标准0.6μm体硅CMOS工艺设计了不同宽长比、不同沟道长度及不同版图结构的非加固型NMOS晶体管作为测试样品.经高剂量60Coγ射线的总剂量辐照实验,讨论其在不同栅源偏置电压下的总剂量辐照特性.研究表明NMOS总剂量效应对辐照时栅源偏置电压敏感;辐照引起阈值电压的漂移随W/L的变化不明显;沟道长度及版图结构对NMOS管辐照后的源漏极间泄漏电流的影响显著.
The test chips were designed and processed in a commercial 0. 6 μm standard CMOS/Bulk process. Device parameters were monitored before and after irradiation with about 9.5 kGy（Si）^60Co γ-rays. Comparisons of the effects with different device sizes and different layout structures were made. The effects of different biasing conditions during irradiation are discussed. The experiment results show that W/L does not change the threshold voltage shift after γ-ray irradiation. Channel length and layout structure enormously influence the leakage between source and drain induced by irradiation.
出处
《电子器件》
CAS
2007年第3期748-751,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助(60372021/F010204)
关键词
NMOS晶体管
辐照效应
总剂量
NMOS transistors
radiation effect
Total Dose Effects
