摘要
设计了一个Ka频段低噪声放大器MMIC，该芯片采用两级放大的结构，通过调节有源器件几何尺寸（栅宽和叉指数）和源极串联负反馈，减小最佳噪声匹配点（Гo）和共轭匹配点（S11）之间的距离，使低噪声放大器同时获得最佳噪声匹配和共轭匹配。另一方面，在源极引入串联负反馈可提高放大器的稳定性。该放大器采用商用的0．181μm pHEMT工艺制造，芯片面积为1．4×0．9mm^2。把该芯片安装在测试电路上进行测试，在29～33GHz频率范围内，实现增益大于10dB，30GHz处噪声系数约为2．3dB。
A Ka-band two-stage low noise amplifier （LNA） monolithic microwave integrated circuit （MMIC） has been developed. The gate width of the active device and the source series feedback are chosen carefully to minimize the distance between Гo and S11, where Fo is the load impedance providing the minimum noise figure and S11 is a conjugate reflection coefficient of S11, and then the LNA can achieve optimal noise match and conjugate match simultaneously. Also the source series feedback can increase the stability of the LNA. The amplifier that is fabricated by a commercial 0. 18μm pseudomorphic high electron-mobility transistor （pHEMT） has achieved a gain of more than 10dB in the frequency range of 29 to 33 GHz and a noise figure of 2.3 dB at 30 GHz. The chip size is 1.4 × 0.9mm^2.
出处
《微波学报》
CSCD
北大核心
2007年第3期39-42,共4页
Journal of Microwaves
基金
砷化镓超高速集成电路和微波功率器件国防科技重点实验室基金(51432060105DZ0210)
