期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

硅纳米线的制备技术 被引量：5

Preparation Methods of Silicon Nanowires
下载PDF
导出
摘要 硅纳米线作为一种新型的一维纳米材料,在纳米电子器件、光电器件及集成电路方面具有很好的应用前景。介绍了硅纳米线在制备方面的国内外研究现状与进展,重点讨论了基于金属催化气-液-固(VLS)生长机理、氧化物辅助生长机理的硅纳米线制备及模板法等制备硅纳米线的研究成果、特点及生长机理。与金属催化VLS生长机理相比,氧化物辅助生长硅纳米线不需要金属催化剂,能避免金属污染,保证了硅纳米线的纯度,因而是今后深入研究的方向。 Si nanowire is a new kind of one-dimensional nanoscale materials and is very promising in applications for nanoscale electronic devices, optoelectronic devices and integrate circuit. The current research situation and recent development of the preparation methods of Si nanowires are introduced. The research results and characteristics of the preparation methods of Si nanowires prepared according to metal vapor-liquid-solid （ VLS ） growth mechanism, oxide-assisted growth mechanism and template method et al. are discussed in detail in the paper. Compared to Si nanowires prepared by metal-catalytic VLS growth mechanism, Si nanowires prepared by oxide-assisted growth mechanism without metal catalysts have no metal pollution resulting in the increase of the purity of Si nanowires. Therefore, oxide-assisted growth mechanism for preparing Si nanowires is an important research direction in future.
作者 裴立宅
机构地区 安徽工业大学
出处 《稀有金属快报》 CSCD 2007年第6期11-17,共7页 Rare Metals Letters
关键词 硅纳米线 激光烧蚀法 热蒸发法 模板法 生长机理 silicon nanowires laser ablation thermal evaporation template method growth mechanism
分类号 TN305.3 [电子电信—物理电子学]
  • 相关文献

参考文献40

  • 1[1]Morales A M,Lieber C M.A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires[J].Science,1998,279(15):208～211
  • 2[2]Feng S Q,Yu D P,Zhang H Z,et al.The Growth Mechanism of Silicon Nanowires and Their Quantum Confinement Effect[J].J Cryst Growth,2000,209(2):513～517
  • 3[3]Yu D P,Lee C S,BeHo I,et al.Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature[J].Solid State Commun,1998,105(4):403～407
  • 4[4]Zeng X B,Xu Y Y,Zhang S B,et al.Silicon Nanowires Grown on a Pre-Annealed Si Substrate[J].J Cryst Growth,2003,247(9):13～16
  • 5[5]Liu Z Q,Pan Z W,Sun L F,et al.Synthesis of Silicon Nanowires using AuPd Nanoparticles Catalyst on Silicon Substrate[J].J Phys Chem Solids,2000,61(2):1171～1174
  • 6[6]Nataphan S,Daniel E R.Temperature Dependence of the Quality of Silicon Nanowires Produced over a Titania-Supported Gold Catalyst[J].Chem Phys Lett,2003,377:377～383
  • 7[7]Liu Z Q,Xie S S,Zhou W Y,et al.Catalytic Synthesis of Straight Silicon Nanowires over Fe Containing Silica Gel Substrates by Chemical Vapor Deposition[J].J Cryst Growth,2001.224(3):230～234
  • 8张亚利,郭玉国,孙典亭.纳米线研究进展(1):制备与生长机制[J].材料科学与工程,2001,19(1):131-136. 被引量：20
  • 9[10]Yu D P,Lee C S,Bello I,et al.Synthesis of Nano-Scale Silicon Wires by Excimer laser Ablation at High Temperature[J].Solid State Commun,1998,105:403～407
  • 10[11]Yang Y H,Wu S J,Chiu H S,et al.Catalytic Growth of Silicon Nanowires Assisted by Laser Ablation[J].J Phys Chem B,2004,108:846～852

二级参考文献40

  • 1NAMATSU H, HORIGUCHI S, NAGASE M, et al. Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics [J]. J Vac Sci Technol B, 1997, 15(5): 1688-1696.
  • 2ALI D, AHMED H. Coulomb blockade in a silicon tunnel junction device [J]. Appl Phys Lett, 1994, 64(16): 2119-2120.
  • 3LEOBANDUNG E, GUO L, WANG Y, et al. Observation of quantum effects and coulomb blockade in silicon quantum-dot transistors at temperature over 100K [J]. Appl Phys Lett, 1995, 67(7): 938-940.
  • 4LIU H I, BIEGELSEN D K, JOHNSON N M, et al. Self-limiting oxidation of Si nanowires [J]. J Vac Sci Technol B, 1993, 11(6): 2532-2537.
  • 5ONO T, SAITOCH H, ESASHI M. Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy [J]. Appl Phys Lett, 1997, 70(14): 1852-1854.
  • 6MORALES A M, LIEBER C M. A laser ablation method for the synthesis of crystalline semiconductor nanowires [J]. Science, 1998, 279: 208-211.
  • 7TANG Y H, ZHANG Y F, LEE C S, et al. Large scale synthesis of silicon nanowires by laser ablation [J]. Mater Res Soc Symp Proc, 1998, 526: 73-77.
  • 8SHINGGUBARA S, OKINA O, SAYAMA Y, et al. Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum [J]. Solid State Electron, 1999, 43: 1143-1146.
  • 9LU X M, HANRATH T, JOHNSTON K P, et al. Growth of single crystal silicon nanowires in supercritical solution from tethered gold particles on a silicon substrate [J]. Nano Lett, 2003, 3(1): 93-99.
  • 10唐元洪.[D].香港:香港城市大学,2000.

共引文献25

同被引文献63

引证文献5

二级引证文献3

稀有金属快报
2007年 第6期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部