摘要
使用真空热蒸发方法,制备了结构为ITO/TPD/Alq3/LiF/Al的有机发光二极管,其中LiF用作阴极注入层,LiF超薄层的加入,增强了电子注入,降低了启亮电压,提高了器件的发光效率和亮度.实验结果表明:当加入LiF层的厚度为0.5 nm时,器件性能的改善最好,和不含LiF的器件相比,启亮电压由原来的9 V降低到5 V,效率由1.5 cd/A增加到3.3 cd/A,提高了近1倍,然而随着加入LiF层厚度的增加,器件性能的改善效果降低.
Organic light-emitting diodes using LiF as a cathode injection layer are fabricated by vapor thermal deposition. The diode with structure of ITO/TPD/Alq3/LiF/Al （ TPD ： N, N＇ - diphenyl- N, N＇ - his （3-methylphenyl） -1,1 ＇ -biphenyl-4, 4＇ -diamine, Alq3 ： tris （ 8-quinolinolato ） - aluminum） performed better electroluminescent properties compared with the diodes without LiF layer. Experimental resuits showed that the insertion of ultra-thin LiF layer enhances the electron injection, reduces the turn-on voltage and improves the luminance and efficiency of diodes. The diode with a 0. 5 nm LiF layer demonstrated the best performance, the turn-on voltage lowers to 5 V and efficiency increases to 3.3 cd/A in comparison with 9 V and 1.5 ccL/A of the diode without LiF layer. However, the performances of diodes become worse with increasing thickness of LiF layer.
出处
《暨南大学学报（自然科学与医学版）》
CAS
CSCD
北大核心
2007年第3期272-275,共4页
Journal of Jinan University(Natural Science & Medicine Edition)
基金
广东省自然科学基金资助项目(06025173)
关键词
有机发光二极管
LIF
电子注入
界面形貌
Organic light-emitting diodes
LiF
Electron injection
Interfacial shape
