摘要
本文采用升华法沿着垂直于c轴方向的[1 ■00]方向生长6H-SiC单晶。利用光学显微镜对晶体表面及腐蚀后的晶片进行观察,发现沿[1 ■00]方向生长出的单晶与传统方法沿[0001]方向生长单晶有很多的不同之处,多型对于籽晶的继承性非常强,但是在生长过程中多型夹杂不会发生,该方法生长的晶体中没有发现螺位错(微管)缺陷。
6H-SiG single crystals have been grown along the [ 1^-100 ] direction by the sublimation method. The surfaces of crystal and etching wafer were observed by optical microscope. The crystals are different in many aspects from those grown along [0001 ] direction by conventional method. The polytypic structure of crystal grown in the [ 1^-100 ] direction perfectly succeeds to that of the seed, and thus polytype inclusions never occur during growth. The crystal contains no screw dislocations and micropipes.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第1期14-17,共4页
Journal of Synthetic Crystals
基金
山东省半导体照明工程关键技术
教育部新世纪优秀人才支持计划资助项目
关键词
升华法
SIC
微管
多型
sublimation method
SiC
micropipe
polytype
