摘要
在ZnO发光材料中存在的各种结构缺陷是制约ZnO发光性能的一个关键因素。本文在查阅文献的基础上,总结了ZnO薄膜材料中可能存在的缺陷类型,并就位错及界面的性质及其对发光性能影响的研究现状做了重点评述。位错作为非辐射复合中心大大降低了半导体器件的发光效率及使用寿命。ZnO颗粒晶界附近的电子耗尽区使绿光发射减弱甚至消失。ZnO薄膜表面的V型缺陷作为光学通道,使近带边发射穿过ZnO层时不被空间激子层吸收,而异质结、超晶格、量子阱中的界面对ZnO的发光性能则具有更重要的影响。
The defects in ZnO crystal are the key factors for restricting the luminescence properties of the material. In this paper we summarized the defect types that may exist in ZnO thin film and focused on the influences of dislocation and interface on the luminescence properties of ZnO thin films. The dislocations as the nonradiative recombination centers reduce the luminescence efficiency and operational life of the semiconductor devices, The electron depletion regions near the boundaries of ZnO particles make the intensity of the green emission die down to disappear even. The near-bandedge emission can be transmitted through a ZnO layer without internal absorption in the exciton-dead layer because the V-shape defects with approximately 30nm depth can act as the optical paths in ZnO surface. And the interfaces of heterojunction, spuerlattice and quantum well have very important influences on the luminescence properties of ZnO thin films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第1期175-179,221,共6页
Journal of Synthetic Crystals
基金
教育部高等学校骨干教师资助计划(GG-430-11902-1010)
关键词
ZNO薄膜
位错
界面态缺陷
发光性能
ZnO thin films
dislocation
interface state defects
luminescence properties
