摘要
阐述基于SOI硅片制造新型P+-I-N+双注入磁敏差分电路的设计原理和制造工艺。构成新型P+-I-N+双注入磁敏差分电路的磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术和喷砂工艺进行设置,给出了这种复合区的复合机理。实验结果表明,此种三极管具有磁灵敏度高和可靠性高的特点。因此由这种新型磁敏三极管构成的差分电路还具有温漂小的优点。
New type of P^＋ - I - N^＋ double injection magnetic sensitivity difference circuit is based on SOI, whose design principle and process are expatiated, and whose recombination region is set by anisotropic etching technology in MEMS. At the same time, the recombination mechanism of recombination region is given. The result of the experiment shows that this kind of transistor is provided with high magnetic sensitivity, low noise, and high reliability. So, the difference circuit consisted of this transistor has merit of small temperature float.
出处
《信息技术》
2007年第1期89-90,99,共3页
Information Technology
