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磁控溅射制备参数对ZnO薄膜结构和光学性能的影响 被引量:3

Influence of magnetron sputtering growth parameters on the microstructure and optical properties of ZnO films
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摘要 采用RF磁控溅射法,在硅(100)衬底上生长出高质量(002)晶面取向的ZnO薄膜.通过XRD和透射光谱研究了射频功率和氧气比例对ZnO薄膜的晶粒尺度、应力状态和光学性能的影响.研究结果显示,射频功率在100W下制备的ZnO薄膜,当氧气比例为60%时,能获得单一c轴择优取向和最小半高宽,压应力最小的薄膜,即结晶性较好的薄膜. ZnO thin films with (002) orientation have been deposited on Si(100) substrate by radio frequency (RF) magnetron sputtering technique. The influence of RF power and oxygen ratio on the grain size,the residual stress and optical properties was investigated by X-ray diffraction and transmission spectra. The results show that the crystallization of the ZnO film deposited with sputtering power (100W) and oxygen ratio(60%), can obtain its best c-axis orientation and crystallization and tension stress of the film reaches the lowest.
出处 《纺织高校基础科学学报》 CAS 2007年第2期181-185,共5页 Basic Sciences Journal of Textile Universities
基金 国家自然科学基金资助项目(50271038) 国家重点基础研究发展规划基金资助项目(2004CB619302)
关键词 磁控溅射 ZNO薄膜 射频功率 结晶性 magnetron sputtering ZnO thin films RF power crystallization
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  • 1LEE J B, LEE M H, PARK C K, et al. Effects of lattice mismatches in ZnO/substrat structures on the orientations of ZnO films and characteristics of SAW devices[J]. Thin Solid Films, 2004(447/448):296-301.
  • 2KRUPANIDHI S B, SAYER M, Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide[J]. J Appl Phys,1984,56(11):3 308-3 318.
  • 3贺洪波,范正修,姚振钰,汤兆胜.GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积[J].中国科学(E辑),2000,30(2):127-131. 被引量:7
  • 4YATA M, TODA A, NAGATSUYU H, et al. Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111)[J]. J Appl Phys,1988,63(12):5 751-5 755.
  • 5LI B S, LIU Y C, CHU Z S, et al. High quality ZnO thin films grown by plasma enhanced chemical vapor deposition [J]. J Appl Phys,2002,91(1):501-505.
  • 6FIDDES A J C, DUROSE K, BRINKMAN A W, et al. Preparation of ZnO films by spray pyrolysis[J]. J Cryst Growth, 1996,159 (1) :210-213.
  • 7ALAM M J, CAMERON D C. Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol--gel process[J]. J Vac Sci Technol A,2001,19(4):1 642-1 646.
  • 8OHGAKI T, OHASHI N, KAKEMOTO H, et al. Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy[J]. J Appl Phys,2003,93 (4):1961- 1965.
  • 9RYA Y R, ZHU S, BUDAI J D, et al. Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition[J]. J Appl Phys,2000,88(1) :201-204.
  • 10MINAMI T, IDA S, MIYATA T. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation[J]. Thin Solid Films,2002,416(1/2):92-96.

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同被引文献27

  • 1LIB S, LIU Y C, CHU Z S, et al. High quality ZnO thin films grown by plasma enhanced chemical vapor deposition [ J ]. J Appl Phys ,2002 ,91 ( 1 ) :501-505.
  • 2FIDDES A J:C,DUROSE K,BRINICMAN A W, et al. Preparation of ZnO films by spray pyrolysis[J]. J Cryst Growth,1996, 159(1) :210-213.
  • 3ALAM M J,CAMERON D C. Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol-gel process[ J]. J Vae Sei Teehnol A,2001,19(4) :1 642-1 646,
  • 4OHGAKI T, OHASHI N, KAKEMOTO H,et al. Growth condition dependence of morphology and eleetrie properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy[ J ]. J Appl Phys ,2003,93 (4) :1 961-1 965.
  • 5RYA Y R, ZHU S, BUDAI J D, et al. Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition [ J ]. J Appl Phys ,2000 ,88 ( 1 ) :201-204.
  • 6MINAMI T, IDA S, MIYATA T. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation [ J ]. Thin Solid Films,2002,416 ( 1-2 ) :92-96.
  • 7KIM K H, PARK K C, MAD Y. Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering [ J ]. J Appl Phys, 1997,81 (12) :7 764-7 772.
  • 8CHEN J J, GAO Y, ZENG F, et al. Effect of sputtering oxygen oxygen partial proessure on structure and physical preoperties of high resistivity ZnO film [ J ]. Applied Surface Science,2004,223 ( 1 ) : 318-329.
  • 9WANG Y G, LAU S P, LEE H W, et al. Comprehensive study of ZnO films prepared by filtered cathodic vaccum arc at room temperature[ J]. J Appl Phys ,2003,94 (3) : 1 597-1 604.
  • 10CEBUI_J.,A R,WENDT R,ELLMER K. A,l-doped zinc oxide films deposited by simultaneous RF and DC excitation of a magnetron plasma: relationships between plasma parameters and structural and electrical film properties [ J ]. J Appl Phys1998, 83(2) :1 087-1 095.

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