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亲疏水处理度对于GaAs/GaN键合界面透光性的影响

Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface
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摘要 采用亲疏水两种不同的处理方法,在氮气保护、600℃热处理1h条件下,成功实现了GaN和GaAs异质材料的键合,两种处理方法均可满足器件对于键合强度及键合面积的要求.从亲疏水键合机理的不同出发,研究了两种处理方法对于界面透光性的影响,对键合样品进行了可见光透射谱测试,实验结果表明疏水键合界面对于垂直入射的630nm的光可以获得高达94.7%的透过率,并将键合样品加工成器件进行电致发光(EL)谱测试,实验结果与透射谱测试结果一致. Bonding of GaAs/GaN was successfully achieved at 600℃ in N2 atmosphere for 1h, with two different chemical pretreatments of hydrophilic and hydrophobic processes. Both methods can achieve high bonding strength and large bonding area. Based on the mechanics of the two different pretreatments, the transmittance of the bonding interface with different pretreatments was studied. Results of the transmission spectrum indicate that the hydrophobic process can yield a higher transmittance of 94.7% at 630nm. Devices were fabricated to execute the EL spectrum measurement,the results of which are consistent with the transmission spectrum.
作者 郭晶 郭霞 梁庭 顾晓玲 林巧明 沈光地
机构地区 北京工业大学电控学院北京市光电子技术实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第7期1092-1096,共5页 半导体学报（英文版）
基金 国家高技术研究发展计划(批准号:2006AA03A121) 国家重点基础研究发展规划(批准号:2006CB604902) 国家自然科学基金(批准号:60506012) 霍英东基金(批准号:2003BA316A01-01-08) 北京市人才强教计划(批准号:KZ200510005003 05002015200504) 优秀博士论文基金(批准号:200542)资助项目~~
关键词 键合 亲疏水处理 GaAs/GaN 透过率 bonding hydrophilic hydrophobic GaAs/GaN transmittance
分类号 TN304 [电子电信—物理电子学]
  • 相关文献

参考文献12

  • 1Floyd P D,Treat D W,Bour D P,et al.Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN based light sources.Electron Lett,1999,35 (24):2120.
  • 2Kang Y,Mages P,Lo Y H,et al.Fused InGaAs-Si avalanche photodiodes with low-noise performances.IEEE Photonics Technol Lett,2002,14(11):1593.
  • 3Raburn M,Liu B,Okuno Y,et al.InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer.IEEE Photonics Technol Lett,2001,13(6):579.
  • 4Jayaraman V,Mehta M,Jackson A W,et al.High-power 1320-nm wafer-bonded VCSELs with tunnel junctions.IEEE Photonics Technol Lett,2003,15(11):1495.
  • 5Estrada S,Xing H,Stonas A,et al.Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor.Appl Phys Lett,2003,82 (5):820.
  • 6Estrada S,Huntington A,Stonas A,et al.n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550- 750℃.Appl Phys Lett,2003,83 (3):560.
  • 7Shi F,MacLaren S,Xu C,et al.Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology:interface adhesion and mechanical strength.J Appl Phys,2003,93(9):5750.
  • 8Jasinski J,Liliental-Weber Z,Estrada S,et al.Microstructure of GaAs/GaN interfaces produced by direct wafer fusion.Appl Phys Lett,2002,81(17):3152.
  • 9Jasinski J,Liliental-Weber Z,Estrada S,et al.Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding.Mater Res Soc Symp Proc,2002,722:K7.15.1.
  • 10Estrada S M.GaAs-GaN wafer fusion and the n-AlGaAs/p-GaAs/n-GaN double heterojunction bipolar transistor.PhD Dissertation,University of California Santa Barara,2004.

二级参考文献13

  • 1Jayaraman V,Mehta M,Jackson A W,et al.High-power 1320-nm wafer-bonded VCSELs with tunnel junctions.IEEE Photonics Technol Lett,2003,15 (11):1495
  • 2Kang Y,Mages P,Lo Y H,et al.Fused InGaAs-Si avalanche photodiodes with low-noise performances.IEEE Photonics Technol Lett,2002,14(11):1593
  • 3Raburn M,Liu B,Bowers J E,et al.InP-InGaAsP waferbonded vertically coupled X-crossing multiple channel optical add-drop multiplexer.IEEE Photonics Technol Lett,2001,13 (6):579
  • 4Floyd P D,Treat D W,Bour D P,et al.Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN based light sources.Electron Lett,1999,35(24):2120
  • 5Estrada S,Xing H,Hu E,et al.Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor.Appl Phys Lett,2003,82(5):820
  • 6Estrada S,Huntington A,Stonas A,et al.n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750℃.Appl Phys Lett,2003,83(3):560
  • 7Jasinski J,Liliental-Weber Z,Estrada S,et al.Microstructure of GaAs/GaN interfaces produced by direct wafer fusion.Appl Phys Lett,2002,81(17):3152
  • 8Jasinski J,Liliental-Weber Z,Estrada S,et al.Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding.Mater Res Soc Symp Proc,2002,722:K7.15.1
  • 9Estrada S M.GaAs-GaN wafer fusion and the n-AlGaAs/pGaAs/n-GaN double heterojunction bipolar transistor.PhD Dissertation,University of California Santa Barara,2004
  • 10Chang K L.Wafer bonding with low-temperature grown compound semiconductor materials for optoelectronic device application.PhD Dissertation,University of Illinois at Urbana-Champaign,2003

共引文献1

Journal of Semiconductors
2007年 第7期

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