摘要分析IGBT的特性,对IGBT栅极驱动电路和保护方法进行了研究。The IGBT characteristic was analyzed. The driving circuit and the protection method to the IGBT electronics grid were researched in this paper.
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10Yuan Shoucai, LIU Yamei,Two-mask Silicides Fully Self- aligned for Trench Gate Power IGBTs With SuperJunction Structure [J].IEEE Electron Device Letters, 2008,29 (8) : 931-933.
