摘要
利用Ｓｏｌ－Ｇｅｌ工艺制备了掺杂固溶半导体ＺｎｘＣｄ１－ｘＳ的ＳｉＯ２玻璃．吸收光谱研究表明材料的吸收边随Ｚｎ含量的增加而向短波方向移动；温度提高有利于生成较完整的晶粒．以短脉冲激光为激发光源对材料的光致发光效应作了分析，认为光致发光光谱是由电子与空穴复合发光和表面态与缺陷的复合发光组成，电子－空穴复合发光分布在较大的波长范围内，并且随Ｚｎ含量的增加向短波方向移动。
Solid solution semiconductor(Zn x Cd 1- x S) doped sillica glasses were prepared by sol gel process and in situ technique. The absorption edge of above materials shift to short wavelength direction with increasing of Zn contents. The increase of heat treatment temperature is benefit to format of perfect microcrystallite. The photoluminescence spectra excited by short laser pulse consist of two parts: the first at about 500 nm is produced by recombination of electrons and holes which are trapped in the acceptor or donor energy level, and second at about 600 nm is raised from recombination of surface state and defect, also the former is distributed over longer wavelength range which shift to short wavelength direction with increasing of Zn contents, and the intensity of later is reduced by increasing of heat treatment temperature.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1997年第2期133-137,共5页
Chinese Journal of Luminescence
基金
国家"863"计划资助课题
关键词
光致发光
固溶半导体
吸收边
二氧化硅玻璃
photoluminescence, solid solution semiconductor, absorption edge
