摘要
采用等离子体增强化学气相淀积(PECVD)技术,制备a-SiOx∶H(0<x<2)薄膜,经高温退火形成纳米硅晶粒(nc-Si)埋入SiO2基质的复合膜nc-Si/SiO2.采用简并四波混频技术(DFWM),研究nc-Si/SiO2复合膜的非线性光学性质,观察到这种纳米薄膜材料的位相共轭信号,测得样品在光波波长在589 nm处的三阶非线性极化率为X(3)=5.6×10-6esu,并分析其光学非线性增强机理.
Silicon nanocrystals embedded in SiO2 glassy thin film was prepared by plasma enhanced chemical vapor deposit （PECVD） technique and post-annealing treatment. The nonlinear optical properties of nanocrystalline silicon nc-Si/SiO2 thin film were investigated using degenerate four-wave mixing （DFWM）. The phase conjugation signal was observed, and the third-order nonlinear susceptibility at 589 nm of the sample was measured X^（3）=5.6×10^-6 esu. The nonlinear mechanism of the material was analyzed.
出处
《华侨大学学报（自然科学版）》
CAS
北大核心
2007年第3期243-245,共3页
Journal of Huaqiao University(Natural Science)
基金
福建省自然科学基金资助项目(E0410018)
国务院侨办科研基金资助项目(06QZR02)
