摘要
对于IRF7705型30伏P沟VDMOSFET进行了结构优化设计.给出了该器件的纵向结构和横向结构参数及材料的物理参数.较系统地分析了VDMOSFET的几个重要参数,重点讨论了P沟VDMOSFET的外延层电阻率、外延层厚度、N体区扩散浓度以及各个参数之间的关系,对该类器件的实际生产有一定的指导作用.
The design of 30 V/8 A, P - channel VDMOSFET is optimized in this paper. The horizontal and vertical structure of the device parameters and the physical parameters are given. More systematic analysis of several important parameters of VDMOSFET is put forward. The epitaxial layer resistivity, thickness of the epitaxial layer and the N - body diffusion parameters of P - channel VDMOSFET and the relationship between these parameters are discussed to play a guiding role in the actual production.
出处
《辽宁大学学报（自然科学版）》
CAS
2007年第3期214-217,共4页
Journal of Liaoning University：Natural Sciences Edition
基金
沈阳市科技局资助项目(1032029-2-06)
