期刊文献+

预烧温度对CaCu_3Ti_4O_(12)陶瓷结构和介电性能的影响 被引量:5

Effects of Calcining Temperature on Structure and Dielectric Properties of CaCu_3Ti_4O_(12) Ceramics
下载PDF
导出
摘要 采用固相反应法在不同温度(950~1100℃)下预烧后烧结制备CaCu3Ti4O12(CCTD)陶瓷。对CCTO陶瓷进行物相分析,并测试了20Hz-1MHz频率范围和25~150℃温度区间的介电性能和阻抗谱,详细研究了预烧温度对CCTO陶瓷烧结性能、晶体结构和介电性能的影响。结果表明,较低的预烧温度有利于CCTO陶瓷的烧结,容易获得介电性能较好的CCTO陶瓷。950℃预烧后,于1120℃烧结的CCTD陶瓷室温1kHz频率下介电常数可达12444。 CaCu3Ti4O12 (CCTO) ceramics were prepared by solid state reaction. The calcining temperature was in the range from 950 ℃ to 1100 ℃. The phase analyses were determined by XRD. And dielectric properties and impedance spectroscopes of CCTO ceramics were evaluated in the range of 20 Hz-1 MHz and 25-150 ℃. Effects of the calcining temperature on sintering properties, crystal structure and dielectric properties of CCTO ceramics were investigated. These results showed that lower calcining temperature favors the sintering of CCTO ceramics. Then CCTO ceramics with better dielectric properties was obtained easier. The dielectric constant at room temperature and 1 kHz was 12 444 for CCTO ceramic, which were calcined and sintered at 950 ℃ and 1120 ℃, respectively.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2007年第A01期505-508,共4页 Rare Metal Materials and Engineering
基金 福建省陶瓷重大专项(2005HZ02-3) 福建省青年科技人才创新基金(2005J012) 福州大学人才基金(XJY-0413)
关键词 固相反应 预烧温度 CACU3TI4O12 介电性能 solid state reaction calcining temperature CaCu3Ti4O12 dielectric constant
  • 相关文献

参考文献11

  • 1Subramanian M A,Li D,Duan N et al.J Solid State Chem[J],2000,151:323
  • 2Ramirez A P,Subramanian M A,Gardel M et al.J Solid State Communications[J],2000,115:217
  • 3Homes C C,Vogt T,Shapiro S M et al.Science[J],2001,121:625
  • 4Subramanian M A,Sleight A W.J Solid State Science[J],2002,4:347
  • 5Guillemet-Fritsch B,Lebey T,Boulos M et al.J Eur Ceram Soc[J],2006,26:1245-1257.
  • 6Sinclair D C,Adams T B,Morrison F D et al.Appl Phys Lett[J],2002,80(12):2153
  • 7Bender B A,Pan M J.Mater Sci & Eng B[J],2005,117:339
  • 8Lu F H,Fang F X,Chen Y S.J Eur Cream Soc[J],2001,21:1093
  • 9Adams T B,Sinclair D C,West A R.Adv Mater[J],2002,14:1321
  • 10Ren W,Yu Z,Krstic V D et al.IEEE International Ultrasonic,Ferroelectrics,and Frequency Control Joint 50th Anniversary Conference[C].[S.I.]:IEEE,2004:149

同被引文献67

引证文献5

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部