摘要
测量了硅微条探测器在辐照前后的坪曲线、脉冲高度与偏置电压的关系。
This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of `black hole' after exposed.
出处
《高能物理与核物理》
EI
CSCD
北大核心
1997年第4期292-296,共5页
High Energy Physics and Nuclear Physics
关键词
硅微条
探测器
辐射损伤
黑洞
电压
silicon microstrip detector,radiation damage,`black hole',depletion voltage.
