摘要
利用磁控溅射产生金属Ｃｕ团簇，同时蒸发半导体介质ＣｄＳ，将Ｃｕ团簇包埋在ＣｄＳ介质中，制备出金属颗粒半导体膜．团簇大小可通过改变溅射气压控制．用ＴＥＭ研究了嵌埋团簇的结构．分析表明：ＣｄＳ很好地包埋了Ｃｕ团簇，都呈多晶结构；团簇尺寸在５—２０ｎｍ，Ｃｕ晶格发生了膨胀。
By using magnetic controlled sputtering of atoms and evaporating insulator medium, Cu clusters embedded in CdS, a metal semiconductor film Cu∶CdS has been successfully prepared. TEM is used in studying the microstructure of Cu clusters embedded in the medium CdS. The copper cluster is well embedded in CdS. The size of the triangle shaped grains, Cu clusters, is from 5nm to 20nm. The Cu cluster and medium CdS are both of polycrystalline structures. And the Cu cluster′s lattice constant expands by about 7%.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第5期878-882,共5页
Acta Physica Sinica
基金
国家自然科学基金
国家教育委员会优秀青年教师基金
