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含氮氟化非晶碳（a-C：F：N）薄膜电学性能的研究

Electrical Properties of Nitrogen Doping Fluorinated Amorphous Carbon Thin Films
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摘要 用射频等离子体增强化学气相沉积（RF-PECVD）法制备氮掺杂氟化非晶碳（a-C：F）薄膜，用电桥测试薄膜的介电常数．研究不同工艺参量对薄膜电学性能的影响．结果表明：掺杂氮、高射频功率、高沉积温度以及热退火都导致薄膜介电常数上升． Nitrogen doping fluorinated amorphous carbon （a-C ： F） thin films are deposited using radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. The films＇ dielectric constant is investigated by electric-bridge to study the deposited technical influence on the films. Nitrogen doping, high RF-power, high deposited temperature and thermal annealing can lead to high dielectric constant.
作者 周昕
机构地区 湖南工业大学师专校区物理与电子工程系
出处 《株洲师范高等专科学校学报》 2007年第5期8-10,共3页 Journal of Zhuzhou Teachers College
关键词 氟化非晶碳薄膜 氮掺杂 介电常数 fluorinated amorphous carbon thin films nitrogen dopings dielectric constant
分类号 O484.4 [理学—固体物理]
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参考文献8

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株洲师范高等专科学校学报
2007年 第5期

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