摘要
利用扫描电镜电子通道衬度(SEM-ECC)技术观察和分析了[■ 2 3]和[■ 1 2]共轭双滑移取向铜单晶体的循环饱和位错结构.结果表明,驻留滑移带(PSBs)的位错结构随晶体取向的不同可呈现出不同的形态,如:[■ 1 2]晶体中的楼梯结构和[■ 2 3]晶体中的沿主滑移面排列的不规则或较规则胞结构.同时还观察到[■ 2 3]晶体中形变带的位错结构由一些不规则的墙和胞结构组成.对于晶体取向位于标准取向三角形[0 0 1]-[■ 1 1]边上的铜单晶体,其疲劳位错结构随晶体取向的不同发生有规律的变化,即:当晶体取向从[■ 1 2]分别向[■ 1 1]和[0 0 1]移动时,位错结构由PSB楼梯结构逐步变化到胞结构和迷宫结构.
The dislocation structures in cyclically saturated copper single crystals oriented towards [2^- 2 3] and [1^- 1 2] conjugate double slip were observed and analyzed using electron-channelling contrast technique in scanning electron microscopy （SEM-ECC）. It was found that the persistent slip bands （PSBs） might exhibit different dislocation features depending upon crystallographic orientation, such as ladder structures in the [1^- 1 2] crystal and irregular or partially regular cell structures aligned along the primary slip plane in the [2^- 2 3] crystal. Moreover, the dislocation microstructures in deformation bands （DBs） formed in the [2^- 2 3 ] crystal were observed comprising irregular dislocation walls and cells. For the crystals located on the [0 0 1 ]-[1 ^-1 1 ] side of the standard stereographic triangle, the dislocation structures change regularly with the variation in crystallographic orientation. When the orientation varies from the [1^- 1 2] orientation to [1^- 1 1 ] or [0 0 1 ], the dislocation structures would evolve from PSB ladders as cells or labyrinths.
出处
《东北大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2007年第9期1365-1368,共4页
Journal of Northeastern University(Natural Science)
基金
国家自然科学基金资助项目(50671023)
东北大学留学归国博士启动基金资助项目
关键词
铜单晶
共轭双滑移
循环形变
位错结构
SEM-ECC技术
晶体取向
copper single crystal
conjugate double slip
cyclic deformation
dislocation structure
SEM-ECC technique
crystallographic orientation
