摘要
本文研究了局部定向异质外延生长的金刚石膜的压阻效应，实验研究表明，这种膜的压阻因子在200微应变，室温下约为1300．其值大大超过了单晶硅的相应值，这是因为外延膜中缺陷态降低并且改进了测试方法，文中还简单讨论了金刚石膜压阻效应的起因．
The piezoresistive effect of p-type diamond film with localized heteroepitaxial growth is investigated. The gauge factor for the films at 200 microstrain is found to be about 1300 at room temperature, exceeding that of crystalline silicon. This is due to the facts that the defects in the epitaxial growth films are decreased and the measurement methods are improved. The origins of piezeresistive effect in the diamond films are also discussed briefly.
基金
国家自然科学金资助
关键词
异质外延生长
金刚石膜
压阻效应
Epitaxial growth
Piezoelectricity
Semiconducting diamonds
Semiconducting films
