摘要
为制备用于硅溶片工艺的高浓度硼深扩散自停止腐蚀层硅片,对扩散掺杂工艺进行了研究。结合预淀积和再分布两种条件下扩散的特点,采用两步法工艺制备了高浓度硼深扩散硅片,研究了影响杂质浓度和扩散深度的再分布与预淀积时间比。扩散所得硅片的测试结果与理论计算相当吻合,当再分布与预淀积时间比为1.5倍时,扩散结深为21.7μm,自停止腐蚀层为14μm。
The diffusion was researched through analyzing characteristics of the pre-deposition process and the drive-in process. And two-steps process was applied in order to fabricate the deep boron diffusion etch-stop layer, the etch-stop layer can be obtained with this process. The ratio of drive-in and pre-deposition time was explored because the concentration and depth of etch-stop layer were affected by it, the optimal parameters were achieved in the experiments. Wafers were measured in the laboratory, obtained results are identical with the theories, the junction depth is 21.7 μm and the etch-stop layer is 14 μm when the ratio of drive-in and pre-deposition time is 1.5：1.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第9期59-61,共3页
Electronic Components And Materials
关键词
电子技术
MEMS
体硅溶片工艺
高浓度硼深扩散
自停止腐蚀
预淀积
再分布
electron technology
MEMS
bulk silicon dissolved wafer process
deep boron diffusion
etch-stop
pre-deposition process
drive-in process
