摘要
以不同结构类型的有源区为主线,如三阱垂直跃迁有源区、超晶格有源区、应变补偿量子阱有源区、束缚-连续跃迁有源区和四阱双声子共振有源区等,介绍了半导体能带工程在量子级联激光器中的应用。以不同技术指标和特性参数为主要内容,如激射波长、阈值电流密度、工作温度和输出功率等,评述了量子级联激光器在近3～5年内的研究进展。提出了进一步改善器件性能的可能途径,并指出了其今后研究的新方向。
Applications of semiconductor energy-band engineering into the mid-infrared quantumcascade lasers with different active region structures such as three wells vertical transition active region, superlattice active region, strain-compensated quantum well active region, bound-to-continuum transition active region and four wells double-phonon resonance active region were introduced. Recent progresses of the quantum-cascade lasers with different performance parameters such as lasing wavelength, operated temperatures, threshold current density and peak output power were reviewed, and the new indications of the study on quantum-cascade lasers were pointed out. Some approaches were presented that could improve the performances of such devices.
出处
《微纳电子技术》
CAS
2007年第9期845-852,共8页
Micronanoelectronic Technology
基金
河北省自然科学基金资助项目(503125)
关键词
能带工程
有源区结构
量子级联激光器
特性参数
energy-band engineering
active region structure
quantum-cascade laser
characteristic parameter
