摘要
采用离子束溅射技术,在低生长束流(4～10mA)范围内,对低温(25～300℃)Si薄膜的晶化进行了研究。由Raman和XRD表征分析得出:在300℃采用6mA的生长束流,可在硅衬底上得到结晶性和完整性较好的Si外延薄膜;25℃时,在硅衬底上得到Si薄膜的多晶结构,实现了Si薄膜的低温晶化生长。
Crystalline property of the silicon films deposited by ion beam sputtering at low temperature of 25 -300℃ is investigated in the ion beam current range of 4- 10mA. Using Ram,an scattering and XRD spectra, it is found that when the ion beam current is 6mA, the silicon film with good crystalline property and integrity is obtained on silicon wafer at 300℃ ,and the polycrystalline silicon film is also obtained on silicon wafer at room temperature It＇s realized that the silicon crystal films can be grown at low temperature.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2007年第8期140-142,共3页
Materials Reports
基金
国家自然科基金(60567001)
关键词
SI薄膜
离子束溅射
束流
低温
silicon film, ion beam sputtering, ion beam current, low temperature
