摘要
在绝大多数情况下,IGBT的开关过程都非常迅速,其集电极电压波形的dv/dt非常大。但是在实验中也会观测到一些相对比较缓慢的开关过程。较慢的开关过程可能由多种因素引起。通过实验和理论分析可以证明,其主要起因是IGBT的寄生电容。
In most case, the dv/dt of IGBT collector voltage during switching time is very large. But sometimes, switching waveform with quite small dv/dt can also be observered. This may be caused by many factors, and the parasitic capacitance of IGBT is proved to be the key by the experiment and the analysis.
作者
胡满红
王亚琼
HU Man-hong, WANG,Ya-qiong （Jiyuan Vocational and Technical College, Jiyuan 454650, China）
出处
《新乡师范高等专科学校学报》
2007年第5期45-47,共3页
Journal of Xinxiang Teachers College
