摘要
以二茂铁和二甲苯分别作为催化剂和碳源,采用一种无模板的化学气相沉积法,使用单温炉设备,成功地制备了高度定向的碳纳米管阵列.分别用扫描电子显微镜、透射电子显微镜和电子能量散射谱、拉曼光谱对碳纳米管阵列进行形貌观察和表征,并研究了不同工艺参数对碳纳米管阵列形貌的影响.结果表明:在生长温度为800℃,催化剂浓度为0.02g/mL,抛光硅片上容易获得高质量的定向碳纳米管阵列,在此优化条件下生长的定向碳纳米管的平均生长速率可达25μm/min.
A non-template CVD method was used to synthesize well-aligned carbon nanotube （ACNT） arrays. Ferrocene was used as a catalyst, xylene as the carbon source. This process carried out in a single-furnace system. The products were characterized by Scanning Electron Microscopy （ SEM）, Transmission Electron Microscopy （TEM）, Energy Dispersive Spectrometry （EDS） and Raman Spectroscopy. The effects of process parameters on ACNT arrays growth were also investigated. The results show that well- aligned carbon nanotubes can be easily grown on polished silicon substrate at 800℃ with catalyst concentration of 0.02 mg/L. Under the above conditions the rate of growth of ACNT arrays can reach 25 μm/min.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第10期5958-5964,共7页
Acta Physica Sinica
关键词
碳纳米管
定向
化学气相沉积
carbon nanotubes, aligned, chemical vapor deposition
