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纳米硅薄膜制备及HIT太阳能电池 被引量:7

Preparation of nc-Si∶H film and HIT solar cell
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摘要 在较高工作气压(332.5-399Pa)下,采用等离子增强化学气相沉积(PECVD)工艺制备了优质的本征纳米硅薄膜及掺磷的纳米硅薄膜,并采用X射线衍射(XRD)、拉曼散射(Raman)测试技术对其进行了测试和分析。结果表明纳米硅薄膜的XRD谱中存在(111)(、220)和(331)峰位;Raman谱中显示出其薄膜中的晶粒的大小(2-5nm)符合纳米晶的要求。将制备的纳米硅薄膜初步用于栅极/ITO/n-nc-Si∶H/i-nc-Si∶H/p-c-Si/Al/Ag结构的异质结(HIT)太阳能电池,开路电压(Voc)达404mV,短路电流密度(Jsc)可达到34.2mA/cm^2(AM1.5,100mW/cm^2,25℃)。 Nano-crystalline silicon films (nc-Si : H) were prepared by plasma enhanced chemical vapor deposition (PECVD) under the high deposition pressure(332.5-399Pa) ,which was used for the HIT solar cells (grid electrode/ITO/n-nc-Si: H/i-nc-Si : H/p-c-Si/Al/Ag) with nano-crystalline silicon (nc-Si : H) film as the intrinsic layer and doped nano-crystalline silicon film as the N-layer. The structure of the film was investigated by XRD and Raman. The results show that the size of crystal grains was about 2-6nm,the peaks of (111), (220) and (331) could all been shown in the XRD spectrum. Performances of the solar cell were measured,the open-circuit voltage Voc was 404mV,short-circuit current Jac was 34.2mA/cm^2 (1.5AM, 100mW/cm^2)
出处 《功能材料》 EI CAS CSCD 北大核心 2007年第10期1741-1744,共4页 Journal of Functional Materials
关键词 纳米硅 薄膜 PECVD HIT 太阳能电池 nc-Si : H HIT PECVD film solar cell
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