摘要
主要研究了铸造多晶硅晶锭不同位置的硅片在磷吸杂前后电学性能的变化。结果发现,经过870℃磷吸杂40 min后不同位置处硅片的少数载流子寿命都有显著的提高,其中来自硅锭底部硅片的少数载流子寿命的提高程度明显低于来自顶部样品寿命的提高幅度。由于氧的分凝效应,在铸造多晶硅底部材料中含有较高浓度的间隙氧。结果表明,多晶硅磷吸杂的效果不仅与材料中过渡族金属的分布以及形态有关,而且还可能与硅中氧的浓度有关。
The electrical properties of east multicrystalline wafers cut from different positions of the ingot were studied by microwave photo conductive decay （μ-PCD） before and after phosphorous gettering treatment at 870℃ for 40 minutes. The minority-carrier lifetime of all wafers increased noticeably after phosphorous gettering. Moreover, the gettering effect of the wafers from the top of the ingot was more obvious than that from the bottom. It was found that a high concentration of oxygen existed at the bottom of the ingot, which was due to the segregation effect. The results showed that the gettering performance of multicrystalline silicon not only depended on the distribution and state of transitional metals but also was influenced by the oxygen concentration.
出处
《能源工程》
2007年第3期34-36,共3页
Energy Engineering
基金
国家科技攻关计划项目(2004BA410A02)
浙江省自然科学基金资助项目(Y105468)
关键词
多晶硅
磷吸杂
少子寿命
multicrystalline silicon
gettering
lifetime
