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Dispersive Contribution ofρ(1450, 1700) Decays and X(1576)

Dispersive Contribution ofρ(1450, 1700) Decays and X(1576)
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摘要 We study whether the broad enhancement X(1576) arises from the final state interaction (FSI) of p(1450, 1700)→p^+ p^- →K^+ K^-decay,Both the absorptive and dispersive contributions of the above amplitudes are considered since the intermediate states are very close to p(1450, 1700). AThe same mechanism leads to a similar enhancement around 1580 MeV in the π^+ π^- specturm in the J/ψ →π^0 π^+ π^- channel, which can be used to test whether X(1576) can be ascribed to the FSI effect ofp(1450, 1700) → p^+ p^-. We study whether the broad enhancement X(1576) arises from the final state interaction (FSI) of p(1450, 1700)→p^+ p^- →K^+ K^-decay,Both the absorptive and dispersive contributions of the above amplitudes are considered since the intermediate states are very close to p(1450, 1700). AThe same mechanism leads to a similar enhancement around 1580 MeV in the π^+ π^- specturm in the J/ψ →π^0 π^+ π^- channel, which can be used to test whether X(1576) can be ascribed to the FSI effect ofp(1450, 1700) → p^+ p^-.
机构地区 Department of Physics
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第9期2537-2539,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 10421503 and 10625521, and the Postdoctoral Science Foundation of China under Grant No 20060400376. We thank Professor B. S. Zou for useful suggestion.
关键词 coated conductor buffer layer self-epitaxy CEO2 coated conductor, buffer layer, self-epitaxy, CeO2
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