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堆叠栅介质MOS器件栅极漏电流的计算模型 被引量：1

Calculation of Gate Leakage Currents in MOS Transistors with Gate-Stacked Dielectrics
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摘要 采用顺序隧穿理论和传输哈密顿方法并考虑沟道表面量子化效应,建立了高介电常数堆叠栅介质MOS器件栅极漏电流的顺序隧穿模型。利用该模型数值,研究了Si3N4/SiO2、Al2O3/SiO2、HfO2/SiO2和La2O3/SiO2四种堆叠栅介质结构MOS器件的栅极漏电流随栅极电压和等效氧化层厚度变化的关系。依据计算结果,讨论了堆叠栅介质MOS器件按比例缩小的前景。 A sequential tunneling model was proposed to calculate direct tunneling gate currents through metaloxide semiconductor transistors （MOSTs） with high-k/SiOz gate dielectrics, using Bardeen＇s transfer Hamiltonian formalism and with quantum mechanical effect in inversion layers taken into consideration. Gate leakage currents in four MOSTs with different gate stack dielectrics （Si3 N4/SiO2, Al2O3/SiO2, HfO2 /SiO2 and La2O3/SiO2 ） vs. gate voltages and equivalent oxide thickness were investigated numerically. Sealing down of MOSTs with high-k/SiO2 gate dielectrics was discussed based on the calculated results.
作者 杨红官 朱家俊 喻彪 戴大康 曾云
机构地区 湖南大学物理与微电子科学学院
出处 《微电子学》 CAS CSCD 北大核心 2007年第5期636-639,643,共5页 Microelectronics
基金 湖南省青年骨干教师资助项目(湘教通[2005]247号) 湖南省自然科学基金资助项目(05JJ30115)
关键词 直接隧穿 顺序隧穿 高介电常数栅介质 MOS器件 Direct tunneling Sequential tunneling High-k dielectrics MOS transistor
分类号 TN386.1 [电子电信—物理电子学]
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参考文献10

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共引文献4

同被引文献8

  • 1李艳萍,徐静平,陈卫兵,许胜国,季峰.考虑量子效应的短沟道MOSFET二维阈值电压模型[J].物理学报,2006,55(7):3670-3676. 被引量：4
  • 2Boucart K,Ionescu A M.Double-gate tunnel FET with high-κgate dielectric[J].IEEE Trans ED,2007,54(7):1725-1733.
  • 3Jin-Woo H,Chung-Jin K,Yang-Kyu C.Universal potential model in tied and separated double-gate MOSFETswith consideration of symmetric and asymmetric structure[J].IEEE Trans ED,2008,55(6):1472-1479.
  • 4Kranti A,Armstrong G A.High tolerance to gate misalignment in low voltage gate-underlap double gate MOSFETs[J].IEEE ED Letters,2008,29(5):503-505.
  • 5施敏.半导体器件物理[M].耿丽,译.3版.西安:西安交通大学出版社,2008:250-255.
  • 6Jun Y,Woo J C S.A novel split-gate MOSFET design realized by a fully silicided gate process for the improvementof transconductance and output resistance[J].IEEE ED Letters,2005,26(11):829-831.
  • 7Ruiz F,Tienda-Luna I M,Godoy A.A model of the gate capacitance of surrounding gate transistors:comparisonwith double-gate MOSFETs[J].IEEE Trans ED,2010,57(10):2477-2483.
  • 8Haque A,Kauser M Z.A comparison of wave-function penetration effects on gate capacitance in deep submicronn-and p-MOSFETs[J].IEEE Trans ED,2002,49(9):1580-1587.

引证文献1

微电子学
2007年 第5期

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