摘要
采用溶胶凝胶工艺,在Pt/Ti/SiO2/Si衬底制备了Mg掺杂(Ba0.6Sr0.4)0.925K0.075TiO3(BSKT)薄膜。X射线衍射(XRD)和扫描电镜(SEM)分析测定了物相微结构和薄膜表面形貌,研究了Mg掺杂含量对BSKT晶粒尺寸和直流场介电调谐性能的影响,讨论了直流场介电损耗谱演变的原因。结果表明,Mg掺杂BSKT使薄膜表面粗糙度、晶粒尺寸、介电常量、介电损耗和调谐量都降低;在室温1MHz下,BSKT薄膜有最大的调谐量73.6%;6%(摩尔分数)Mg掺杂BSKT薄膜有最低的介电损耗为0.0088;发现直流场下薄膜的介电损耗谱演变一方面可能与薄膜的晶粒尺寸有关,另一方面也可能与测试温度有关。
The Mg doped （Ba0.6Sr0.4）0.925K0.075TiO3 （BSKT） thin films were fabricated by sol-gel method on Pt/ Ti/SiO2/Si substrate. X-ray diffraction and scanning electron microscopy were used to determine the microstructure and the morphology of the thin films. The influence of the Mg content on grain sizes and dielectric tunable properties of Mg doped BSKT thin films was investigated and the reasons of evolvement of dielectric loss pattern under DC electric field were discussed. It found that the surface roughness,grain size, dielectric constant,dielectric loss and tenability of Mg doped BSKT thin films all decrease with the increasing the Mg content. At room temperature and 1MHz,the BSKT thin film has the maximal tunability of 73. 6% and 6% Mg doped BSKT thin film has the minimal dielectric loss of 0. 0088. It was thought that the evolvement of dielectric loss pattern under DC electric field should be related to grain size and the testing temperature.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第11期1841-1844,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50125309)
