摘要
用超微细氧化铝(Al2O3),二氧化硅(SiO2)粉体及适量的过渡金属氧化物,用固相反应法在1350℃空气中烧结得到了致密的黑色Al2O3陶瓷。研究了SiO2掺杂对陶瓷显微结构和电性能的影响。实验表明:在黑色Al2O3陶瓷中,SiO2是一种较好的掺杂剂,它不仅可以降低烧结温度,使陶瓷晶粒细小均匀,同时还可以改善材料的电气性能,使之满足用作晶体振荡器件、光电器件及集成电路器件等的基板及避光封装外壳的要求。
Using ultra-fine alumina （A12O3）, silica （SiO2） and appropriate transition elements as starting materials, black A1203 ceramics were obtained by conventional solid state reaction method at 1350℃ in ambient air. The effect of SiO2 additive on the micro- structure and electrical properties of black A12O3 ceramics was studied. The results indicated that SiO2 was the right kind of dopant for black A12O3 ceramics. The SiO2 not only lowered the sintering temperature of black A12O3 ceramics, led free grains and uniform microstructure, but also improved electrical properties. The obtained black A12O3 ceramics was suitable for substrate and packaging materials in crystal oscillator, photoelectric device and integrated circuits.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2007年第9期1178-1180,共3页
Journal of The Chinese Ceramic Society
关键词
封装材料
氧化铝陶瓷
氧化硅掺杂
介电性能
packaging materials
alumina ceramics
silica-doping
dielectric properties
